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IRFBC40のメーカーはSTMicroelectronicsです、この部品の機能は「N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET」です。 |
部品番号 | IRFBC40 |
| |
部品説明 | N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとIRFBC40ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
® IRFBC40
N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
IRFBC40
600 V
< 1.2 Ω
6.2 A
s TYPICAL RDS(on) = 1.0 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gat e-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
600
600
± 20
2
3.9
25
125
1.0
3
-65 to 150
150
(1) ISD ≤ 6.2 A, di/dt ≤ 80 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
August 1998
1/8
1 Page IRFBC40
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 300 V ID = 3.6 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID = 6.2 A VGS = 10 V
Min.
Typ .
18
8
38
9.9
13.3
Max.
50
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 6.2 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ .
8
5
15
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 6.2 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD =6.2 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
Max.
6.2
25
Unit
A
A
1.6
530
V
ns
4.5 µC
17 A
Safe Operating Area
Thermal Impedance
3/8
3Pages IRFBC40
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ IRFBC40 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFBC40 | N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET | STMicroelectronics |
IRFBC40 | 6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
IRFBC40 | 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs | Harris Corporation |
IRFBC40 | Power MOSFET(Vdss=600V/ Rds(on)max=1.2ohm/ Id=6.2A) | International Rectifier |