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IRFBC30LのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A)」です。 |
部品番号 | IRFBC30L |
| |
部品説明 | Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFBC30Lダウンロード(pdfファイル)リンクがあります。 Total 10 pages
PD- 91890B
SMPS MOSFET IRFBC30AS/L
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
HEXFET® Power MOSFET
VDSS
600V
Rds(on) max ID
2.2Ω
3.6A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified (See AN 1001)
D 2 Pak
T O -26 2
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
3.6
2.3
14
74
0.69
± 30
7.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topology:
l Single transistor Flyback
Notes through
are on page 10
www.irf.com
1
5/4/00
1 Page IRFBC30AS/L
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
0.01
0.1
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10
TJ = 150 ° C
1
TJ = 25 °C
0.1
0.01
4.0
V DS= 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0 ID = 3.6A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFBC30AS/L
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
400
ID
TOP
1.6A
2.3A
BOTTOM 3.6A
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
740
720
700
680
660
640
0.0
1.0 2.0 3.0
IAV , Avalanche Current ( A)
4.0
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
www.irf.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ IRFBC30L データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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