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IRFBC30A の電気的特性と機能

IRFBC30AのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFBC30A
部品説明 Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFBC30A Datasheet, IRFBC30A PDF,ピン配置, 機能
SMPS MOSFET
PD- 91889A
IRFBC30A
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
HEXFET® Power MOSFET
VDSS
600V
Rds(on) max ID
2.2
3.6A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified (See AN 1001)
TO-220AB G D S
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
3.6
2.3
14
74
0.69
± 30
7.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topology:
l Single transistor Flyback
Notes  through … are on page 8
www.irf.com
1
5/4/00

1 Page





IRFBC30A pdf, ピン配列
IRFBC30A
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
0.01
0.1
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10
TJ = 150 ° C
1
TJ = 25 °C
0.1
0.01
4.0
V DS= 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0
VGS , Gate-to-Source Voltage (V)
9.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 3.6A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFBC30A 電子部品, 半導体
IRFBC30A
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
700
ID
TOP
1.6A
600 2.3A
BOTTOM 3.6A
500
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
740
720
700
680
660
640
0.0
1.0 2.0 3.0
IAV , Avalanche Current ( A)
4.0
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
www.irf.com

6 Page



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