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IRFBA22N50AのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)」です。 |
部品番号 | IRFBA22N50A |
| |
部品説明 | Power MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFBA22N50Aダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD-91866B
SMPS MOSFET
IRFBA22N50A
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptible Power Supply
l High Speed Power Switching
VDSS
500V
RDS(on) max
0.23Ω
ID
24A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN1001)
Super-220™
(TO-273AA)
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
24
15
96
340
2.7
± 30
3.4
-55 to + 150
300 (1.6mm from case )
20
Units
A
W
W/°C
V
V/ns
°C
N
Applicable Off Line SMPS Topologies:
l Full Bridge Converters
l Power Factor Correction Boost
Notes through
are on page 8
www.irf.com
1
12/12/00
1 Page IRFBA22N50A
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
4.5V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ = 150 °C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 150°C
10
TJ = 25°C
V DS = 50V
20µs PULSE WIDTH
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 23A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFBA22N50A
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
2500
TOP
ID
10.7A
15A
2000
BOTTOM 24A
1500
1000
500
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
640
630
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
620
610
600
590
0
4 8 12 16 20
I av , Avalanche Current (A)
A
24
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRFBA22N50A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFBA22N50 | Power MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A) | International Rectifier |
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