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IRFBA1405 の電気的特性と機能

IRFBA1405のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=55V/ Rds(on)=5.0mohm/ Id=174A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFBA1405
部品説明 Power MOSFET(Vdss=55V/ Rds(on)=5.0mohm/ Id=174A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFBA1405 Datasheet, IRFBA1405 PDF,ピン配置, 機能
PD -94111
AUTOMOTIVE MOSFET
Typical Applications
q Electric Power Steering (EPS)
q Anti-lock Braking System (ABS)
q Wiper Control
q Climate Control
q Power Door
Benefits
q Advanced Process Technology
q Ultra Low On-Resistance
q Dynamic dv/dt Rating
G
q 175°C Operating Temperature
q Fast Switching
q Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175oC junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220 TM is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is significantly increased current
handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance
silicon and the Super-220 TM package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Absolute Maximum Ratings
IRFBA1405P
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 5.0m
ID = 174A†
S
Super-220™
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
www.irf.com
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
174†
123†
680
330
2.2
± 20
560
See Fig.12a, 12b, 15, 16
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
1
3/1/01

1 Page





IRFBA1405 pdf, ピン配列
IRFBA1405P
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
0.1
20µs PULSE WIDTH
TJ = 175 °C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25° C
TJ = 175 ° C
10
V DS= 25V
20µs PULSE WIDTH
1
4 6 8 10 12
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 169A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFBA1405 電子部品, 半導体
IRFBA1405P
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
1200
1000
800
TOP
BOTTOM
ID
41A
71A
101A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.0
3.5
3.0 ID = 250µA
2.5
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

6 Page



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共有リンク

Link :


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