DataSheet.jp

IRFB9N60A の電気的特性と機能

IRFB9N60AのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB9N60A
部品説明 Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRFB9N60Aダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

IRFB9N60A Datasheet, IRFB9N60A PDF,ピン配置, 機能
PD - 91811
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Fast Switching
l Ease of Paraleling
l Simple Drive Requirements
IRFB9N60A
HEXFET® Power MOSFET
D
VDSS = 600V
RDS(on) = 0.75
G
ID = 9.2A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
9.2
5.8
37
170
1.3
± 30
290
9.2
17
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
10/7/98

1 Page





IRFB9N60A pdf, ピン配列
IRFB9N60A
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
1
4.7V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
10
4.7V
20µs PULSE WIDTH
TJ = 150 °C
1
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 150 ° C
10
TJ = 25° C
1
0.1
4.0
V DS= 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 9.2A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFB9N60A 電子部品, 半導体
IRFB9N60A
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
600
ID
TOP
4.1A
500 5.8A
BOTTOM 9.2A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRFB9N60A データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFB9N60

Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A)

International Rectifier
International Rectifier
IRFB9N60A

Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A)

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap