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IRFB61N15D の電気的特性と機能

IRFB61N15DのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=150V/ Rds(on)max=0.032ohm/ Id=50A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB61N15D
部品説明 Power MOSFET(Vdss=150V/ Rds(on)max=0.032ohm/ Id=50A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB61N15D Datasheet, IRFB61N15D PDF,ピン配置, 機能
PD- 94207
SMPS MOSFET IRFB61N15D
Applications
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
HEXFET® Power MOSFET
VDSS
150V
RDS(on) max
0.032
ID
60A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
60
42
250
2.4
330
2.2
± 30
3.7
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Notes  through … are on page 8
www.irf.com
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
1
5/3/01

1 Page





IRFB61N15D pdf, ピン配列
IRFB61N15D
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
0.1
0.01
0.1
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 175 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100 TJ = 175° C
10
1
0.1
0.01
4
TJ = 25 ° C
V DS = 25V
20µs PULSE WIDTH
6 8 10
VGS, Gate-to-Source Voltage (V)
12
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5 ID = 62A
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFB61N15D 電子部品, 半導体
IRFB61N15D
15V
VDS
L
DR IV ER
RG
2V0GVS
tp
D.U .T
IA S
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
1200
1000
800
TOP
BOTTOM
ID
15A
26A
37A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFB61N15D

Power MOSFET(Vdss=150V/ Rds(on)max=0.032ohm/ Id=50A)

International Rectifier
International Rectifier
IRFB61N15DPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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