|
|
IRFB59N10のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A)」です。 |
部品番号 | IRFB59N10 |
| |
部品説明 | Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB59N10ダウンロード(pdfファイル)リンクがあります。 Total 11 pages
PD - 93890
SMPS MOSFET
IRFB59N10D
IRFS59N10D
IRFSL59N10D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
100V
RDS(on) max
0.025Ω
ID
59A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB59N10D
D2Pak
TO-262
IRFS59N10D IRFSL59N10D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Typical SMPS Topologies
l Half-bridge and Full-bridge DC-DC Converters
l Full-bridge Inverters
Notes through are on page 11
www.irf.com
Max.
59
42
236
3.8
200
1.3
± 30
3.3
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
1
4/17/00
1 Page IRFB/IRFS/IRFSL59N10D
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
5.0V
0.1
0.01
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
5.0V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 175 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175° C
10
1
0.1
4
TJ = 25 ° C
V DS = 50V
20µs PULSE WIDTH
6 8 10 12
VGS, Gate-to-Source Voltage (V)
14
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 59A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFB/IRFS/IRFSL59N10D
VDS
L
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
15V
D R IV E R
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
1200
900
ID
TOP
14.5A
25.0A
BOTTOM 35.4A
600
300
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 11 ページ | ||
|
PDF ダウンロード | [ IRFB59N10 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFB59N10 | Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A) | International Rectifier |
IRFB59N10D | Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A) | International Rectifier |
IRFB59N10DPBF | HEXFET Power MOSFET | International Rectifier |