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IRFB41N15DのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)」です。 |
部品番号 | IRFB41N15D |
| |
部品説明 | Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB41N15Dダウンロード(pdfファイル)リンクがあります。 Total 11 pages
SMPS MOSFET
PD- 93804A
IRFB41N15D
IRFS41N15D
IRFSL41N15D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
RDS(on) max
0.045Ω
ID
41A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB41N15D
D2Pak
TO-262
IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
41
29
164
3.1
200
1.3
± 30
2.7
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Notes through
are on page 11
www.irf.com
1
2/14/00
1 Page 1000
100
VGS
TOP 15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
IRFB/IRFS/IRFSL41N15D
1000
100
VGS
TOP 15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
10
6.0V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 6.0V
20µs PULSE WIDTH
TJ = 175 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 175° C
TJ = 25° C
10
V DS= 25V
20µs PULSE WIDTH
1
6 7 8 9 10 11
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 41A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFB/IRFS/IRFSL41N15D
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
VGS
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
1200
1000
800
TOP
BOTTOM
ID
10A
21A
25A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
6 Page | |||
ページ | 合計 : 11 ページ | ||
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PDF ダウンロード | [ IRFB41N15D データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFB41N15D | Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A) | International Rectifier |
IRFB41N15DPBF | HEXFET Power MOSFET | International Rectifier |