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IRFB41N15D の電気的特性と機能

IRFB41N15DのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB41N15D
部品説明 Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB41N15D Datasheet, IRFB41N15D PDF,ピン配置, 機能
SMPS MOSFET
PD- 93804A
IRFB41N15D
IRFS41N15D
IRFSL41N15D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
RDS(on) max
0.045
ID
41A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB41N15D
D2Pak
TO-262
IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
41
29
164
3.1
200
1.3
± 30
2.7
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Notes  through … are on page 11
www.irf.com
1
2/14/00

1 Page





IRFB41N15D pdf, ピン配列
1000
100
VGS
TOP 15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
IRFB/IRFS/IRFSL41N15D
1000
100
VGS
TOP 15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
10
6.0V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 6.0V
20µs PULSE WIDTH
TJ = 175 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 175° C
TJ = 25° C
10
V DS= 25V
20µs PULSE WIDTH
1
6 7 8 9 10 11
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 41A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFB41N15D 電子部品, 半導体
IRFB/IRFS/IRFSL41N15D
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
VGS
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
1200
1000
800
TOP
BOTTOM
ID
10A
21A
25A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com

6 Page



ページ 合計 : 11 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
IRFB41N15D

Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)

International Rectifier
International Rectifier
IRFB41N15DPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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