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IRFB31N20 の電気的特性と機能

IRFB31N20のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB31N20
部品説明 Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB31N20 Datasheet, IRFB31N20 PDF,ピン配置, 機能
SMPS MOSFET
PD- 93805B
IRFB31N20D
IRFS31N20D
IRFSL31N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.082
ID
31A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB31N20D
D2Pak
TO-262
IRFS31N20D IRFSL31N20D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
31
21
124
3.1
200
1.3
± 30
2.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V Input Forward Converters
Notes  through ‡ are on page 11
www.irf.com
1
2/14/00

1 Page





IRFB31N20 pdf, ピン配列
IRFB/IRFS/IRFSL31N20D
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
10
1
0.1
0.1
20µs PULSE WIDTH
5.5V TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
10
5.5V
20µs PULSE WIDTH
TJ = 175 °C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 175 ° C
10
TJ = 25° C
1
0.1
5
V DS= 50V
20µs PULSE WIDTH
6 7 8 9 10
VGS , Gate-to-Source Voltage (V)
11
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 30A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFB31N20 電子部品, 半導体
IRFB/IRFS/IRFSL31N20D
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
1000
800
TOP
BOTTOM
ID
7.3A
15A
18A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com

6 Page



ページ 合計 : 11 ページ
 
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[ IRFB31N20 データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
IRFB31N20

Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)

International Rectifier
International Rectifier
IRFB31N20D

Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)

International Rectifier
International Rectifier
IRFB31N20DPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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