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PDF IRFB260N Data sheet ( Hoja de datos )
| Número de pieza | IRFB260N | |
| Descripción | Power MOSFET(Vdss=200V/ Rds(on)max=0.040ohm/ Id=56A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 94270
SMPS MOSFET IRFB260N
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.040Ω
ID
56A
Benefits
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective COSS to
Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
56
40
220
380
2.5
± 20
10
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
°C/W
Notes through
are on page 8
www.irf.com
1
8/29/01
1 page  
IRFB260N
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature
( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFB260N.PDF ] | |
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