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IRFB260 の電気的特性と機能

IRFB260のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=200V/ Rds(on)max=0.040ohm/ Id=56A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB260
部品説明 Power MOSFET(Vdss=200V/ Rds(on)max=0.040ohm/ Id=56A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB260 Datasheet, IRFB260 PDF,ピン配置, 機能
PD - 94270
SMPS MOSFET IRFB260N
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.040
ID
56A
Benefits
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective COSS to
Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
56
40
220
380
2.5
± 20
10
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
°C/W
Notes  through … are on page 8
www.irf.com
1
8/29/01

1 Page





IRFB260 pdf, ピン配列
IRFB260N
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
3.0
VDS = 15V
20µs PULSE WIDTH
5.0 7.0 9.0 11.0 13.0
VGS, Gate-to-Source Voltage (V)
15.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5
I D = 56A
3.0
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFB260 電子部品, 半導体
IRFB260N
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
850
ID
TOP
14A
24A
680
BOTTOM
34A
510
340
170
0
25 50 75 100 125
Starting T , JJunction Temperature
150 175
( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



ページ 合計 : 8 ページ
 
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[ IRFB260 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFB260

Power MOSFET(Vdss=200V/ Rds(on)max=0.040ohm/ Id=56A)

International Rectifier
International Rectifier
IRFB260N

Power MOSFET(Vdss=200V/ Rds(on)max=0.040ohm/ Id=56A)

International Rectifier
International Rectifier
IRFB260NPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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