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IRFB23N20D の電気的特性と機能

IRFB23N20DのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=200V/ Rds(on)max=0.10ohm/ Id=24A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB23N20D
部品説明 Power MOSFET(Vdss=200V/ Rds(on)max=0.10ohm/ Id=24A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB23N20D Datasheet, IRFB23N20D PDF,ピン配置, 機能
SMPS MOSFET
PD- 93904A
IRFB23N20D
IRFS23N20D
IRFSL23N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.10
ID
24A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB23N20D
D2Pak
TO-262
IRFS23N20D IRFSL23N20D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
24
17
96
3.8
170
1.1
± 30
3.3
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes  through … are on page 11
www.irf.com
1
4/26/00

1 Page





IRFB23N20D pdf, ピン配列
IRFB/IRFS/IRFSL23N20D
100
10
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.01
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
5.0V
20µs PULSE WIDTH
TJ = 175 °C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 175° C
10
TJ = 25° C
1
0.1
5.0
V DS= 50V
20µs PULSE WIDTH
6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5 ID = 24A
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFB23N20D 電子部品, 半導体
IRFB/IRFS/IRFSL23N20D
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
600
ID
TOP
5.9A
500 10A
BOTTOM 14A
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



ページ 合計 : 11 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
IRFB23N20D

Power MOSFET(Vdss=200V/ Rds(on)max=0.10ohm/ Id=24A)

International Rectifier
International Rectifier
IRFB23N20DPBF

SMPS MOSFET

International Rectifier
International Rectifier


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