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IRFB20N50KのメーカーはInternational Rectifierです、この部品の機能は「SMPS MOSFET」です。 |
部品番号 | IRFB20N50K |
| |
部品説明 | SMPS MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB20N50Kダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 94418
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
VDSS
500V
IRFB20N50K
HEXFET® Power MOSFET
RDS(on) typ.
0.21Ω
ID
20A
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low RDS(on)
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Max.
20
12
80
280
2.2
± 30
6.9
-55 to + 150
300
10
Units
A
W
W/°C
V
V/ns
°C
N
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
330
20
28
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.45
–––
58
Units
°C/W
www.irf.com
1
4/2/02
1 Page IRFB20N50K
100
VGS
TOP 15V
12V
10V
8.0V
10 7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
0.01
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
10 5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.0
10.0
TJ = 150°C
1.0 TJ = 25°C
0.1
0.0
5.0
VDS = 50V
20µs PULSE WIDTH
6.0 7.0 8.0 9.0
VGS , Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5
ID = 20A
3.0
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFB20N50K
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
600
ID
TOP
9.4A
500 17A
BOTTOM
20A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRFB20N50K データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFB20N50K | SMPS MOSFET | International Rectifier |
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IRFB20N50KPBF | HEXFET Power MOSFET | International Rectifier |