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IRFB18N50KのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)」です。 |
部品番号 | IRFB18N50K |
| |
部品説明 | Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB18N50Kダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 93926B
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
VDSS
500V
IRFB18N50K
HEXFET® Power MOSFET
RDS(on) typ.
0.26Ω
ID
17A
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low RDS(on)
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Max.
17
11
68
220
1.8
± 30
11
-55 to + 150
300
10
Units
A
W
W/°C
V
V/ns
°C
N
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
370
17
22
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.56
–––
58
Units
°C/W
www.irf.com
1
3/29/01
1 Page IRFB18N50K
100
VGS
TOP
15V
12V
10V
10 8.0V
7.0V
6.0V
5.5V
1 BOTTOM 5.0V
0.1 5.0V
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
10 7.0V
6.0V
5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 150°C
1.00
TJ = 25°C
0.10
0.01
5.0
VDS = 100V
20µs PULSE WIDTH
6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 17A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFB18N50K
750
ID
TOP
7.6A
11A
600 BOTTOM 17A
15V
450
300
150
0
25 50 75 100 125 150
Starting TJ, Junction Temperature (° C)
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
+
- VD D
A
Fig 12c. Unclamped Inductive Test Circuit
V (B R)DSS
tp
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13a. Gate Charge Test Circuit
6
IAS
Fig 12d. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13b. Basic Gate Charge Waveform
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRFB18N50K データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFB18N50K | Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A) | International Rectifier |