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IRFB17N50L の電気的特性と機能

IRFB17N50LのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=500V/ Rds(on)typ.=0.28ohm/ Id=16A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB17N50L
部品説明 Power MOSFET(Vdss=500V/ Rds(on)typ.=0.28ohm/ Id=16A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB17N50L Datasheet, IRFB17N50L PDF,ピン配置, 機能
PD - 94084A
IRFB17N50L
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
VDSS
l High Speed Power Switching
l ZVS and High Frequency Circuit
500V
l PWM Inverters
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
l High Performance Optimised Anti-parallel Diode
HEXFET® Power MOSFET
RDS(on) typ.
0.28
ID
16A
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Max.
16
11
64
220
1.8
± 30
13
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
Mounting Torque, 6-32 or M3 screw
10 lbft.in(N.m)
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
IRRM
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
16
––– –––
64
––– –––
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 16A, VGS = 0V „
––– 170 250
––– 220 330
ns
TJ = 25°C
TJ = 125°C
IF = 16A
di/dt = 100A/µs „
––– 470 710 nC TJ = 25°C
––– 810 1210
TJ = 125°C
––– 7.3 11 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l Bridge Converters
l All Zero Voltage Switching
www.irf.com
1
3/28/01

1 Page





IRFB17N50L pdf, ピン配列
IRFB17N50L
100
VGS
TOP
15V
12V
10V
8.0V
10 7.0V
6.0V
5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
10 5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150° C
10
TJ = 25° C
1
0.1
4.0
V DS = 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 16A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFB17N50L 電子部品, 半導体
IRFB17N50L
800
TOP
ID
7A
10A
640 BOTTOM 16A
15V
480
VDS
L
D R IV E R
320
160
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (° C)
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12c. Unclamped Inductive Test Circuit
V (B R)DSS
tp
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13a. Gate Charge Test Circuit
6
IAS
Fig 12d. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13b. Basic Gate Charge Waveform
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFB17N50L

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SMPS MOSFET

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