|
|
IRFB17N50LのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=500V/ Rds(on)typ.=0.28ohm/ Id=16A)」です。 |
部品番号 | IRFB17N50L |
| |
部品説明 | Power MOSFET(Vdss=500V/ Rds(on)typ.=0.28ohm/ Id=16A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB17N50Lダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 94084A
IRFB17N50L
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
VDSS
l High Speed Power Switching
l ZVS and High Frequency Circuit
500V
l PWM Inverters
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
l High Performance Optimised Anti-parallel Diode
HEXFET® Power MOSFET
RDS(on) typ.
0.28Ω
ID
16A
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Max.
16
11
64
220
1.8
± 30
13
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
Mounting Torque, 6-32 or M3 screw
10 lbft.in(N.m)
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
IRRM
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
16
––– –––
64
––– –––
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 16A, VGS = 0V
––– 170 250
––– 220 330
ns
TJ = 25°C
TJ = 125°C
IF = 16A
di/dt = 100A/µs
––– 470 710 nC TJ = 25°C
––– 810 1210
TJ = 125°C
––– 7.3 11 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l Bridge Converters
l All Zero Voltage Switching
www.irf.com
1
3/28/01
1 Page IRFB17N50L
100
VGS
TOP
15V
12V
10V
8.0V
10 7.0V
6.0V
5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
10 5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150° C
10
TJ = 25° C
1
0.1
4.0
V DS = 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 16A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFB17N50L
800
TOP
ID
7A
10A
640 BOTTOM 16A
15V
480
VDS
L
D R IV E R
320
160
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (° C)
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
+
- VD D
A
Fig 12c. Unclamped Inductive Test Circuit
V (B R)DSS
tp
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13a. Gate Charge Test Circuit
6
IAS
Fig 12d. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13b. Basic Gate Charge Waveform
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ IRFB17N50L データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFB17N50L | Power MOSFET(Vdss=500V/ Rds(on)typ.=0.28ohm/ Id=16A) | International Rectifier |
IRFB17N50L | Power MOSFET ( Transistor ) | Vishay Siliconix |
IRFB17N50LPBF | SMPS MOSFET | International Rectifier |