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IRFB16N60L の電気的特性と機能

IRFB16N60LのメーカーはInternational Rectifierです、この部品の機能は「SMPS MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB16N60L
部品説明 SMPS MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB16N60L Datasheet, IRFB16N60L PDF,ピン配置, 機能
PD - 94631A
SMPS MOSFET IRFB16N60L
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 385m130ns 16A
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise immunity.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
16
10
60
310
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
2.5
±30
11
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 16
MOSFET symbol
D
(Body Diode)
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
www.irf.com
A showing the
––– ––– 60
integral reverse
G
––– ––– 1.5
fp-n junction diode.
V TJ = 25°C, IS = 16A, VGS = 0V
S
––– 130 200 ns TJ = 25°C, IF = 16A
f––– 240 360
TJ = 125°C, di/dt = 100A/µs
f––– 450 670 nC TJ = 25°C, IS = 16A, VGS = 0V
f––– 1080 1620
TJ = 125°C, di/dt = 100A/µs
––– 5.8 8.7 A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
10/19/04

1 Page





IRFB16N60L pdf, ピン配列
IRFB16N60L
1000
100
10
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
1
0.1
5.0V
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
9.0V
10 8.0V
BOTTOM
7.0V
6.0V
5.0V
1
5.0V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
10
1
0.1
0.01
4
TJ = 25°C
VDS = 50V
20µs PULSE WIDTH
6 8 10 12 14
VGS, Gate-to-Source Voltage (V)
16
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0
ID = 15A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRFB16N60L 電子部品, 半導体
IRFB16N60L
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
P DM
t1
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
t2
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
5.0
4.5
4.0
3.5
ID = 250µA
3.0
2.5
2.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
6 www.irf.com

6 Page



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共有リンク

Link :


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