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IRFB13N50A の電気的特性と機能

IRFB13N50AのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=500V/ Rds(on)max=0.450ohm/ Id=14A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB13N50A
部品説明 Power MOSFET(Vdss=500V/ Rds(on)max=0.450ohm/ Id=14A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB13N50A Datasheet, IRFB13N50A PDF,ピン配置, 機能
PD - 94339
SMPS MOSFET IRFB13N50A
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
VDSS
500V
HEXFET® Power MOSFET
RDS(on) max
ID
0.450
14A
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
14
9.1
56
250
2.0
± 30
9.2
-55 to + 150
300
10
Units
A
W
W/°C
V
V/ns
°C
lbfin (1.1Nm)
Typ.
–––
–––
–––
Max.
560
14
25
Units
mJ
A
mJ
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
°C/W
1
12/10/01

1 Page





IRFB13N50A pdf, ピン配列
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
10 5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.01
0.1
20µs PULSE WIDTH
T J= 25 ° C
1 10
V DS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRFB13N50A
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
4.5V
0.1
0.1
20µs PULSE WIDTH
T J= 150 ° C
1 10
V DS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150 °C
10
TJ = 25 °C
1
0.1
4
V DS= 50V
20µs PULSE WIDTH
6 8 10 12
V GS, Gate-to-Source Voltage (V)
14
16
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0
I D = 14A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRFB13N50A 電子部品, 半導体
IRFB13N50A
1150
TOP
ID
6.3A
8.9A
920
BOTTOM
14A
15V
690
VDS
L
D R IV E R
460
230
0
25 50 75 100
Starting Tj, Junction Temperature
125
( ° C)
150
Fig 12a. Maximum Avalanche Energy
vs. Drain Current
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12c. Unclamped Inductive Test Circuit
V (B R)DSS
tp
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13a. Gate Charge Test Circuit
6
IAS
Fig 12d. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13b. Basic Gate Charge Waveform
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFB13N50A

Power MOSFET(Vdss=500V/ Rds(on)max=0.450ohm/ Id=14A)

International Rectifier
International Rectifier
IRFB13N50APBF

SMPS MOSFET

International Rectifier
International Rectifier


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