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IRFB11N50のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)」です。 |
部品番号 | IRFB11N50 |
| |
部品説明 | Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB11N50ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD- 91809B
SMPS MOSFET IRFB11N50A
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
HEXFET® Power MOSFET
VDSS
500V
Rds(on) max
0.52Ω
ID
11A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
TO-220AB G D S
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
11
7.0
44
170
1.3
± 30
6.9
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies:
l Two Transistor Forward
l Half & Full Bridge
l Power Factor Correction Boost
Notes through
are on page 8
www.irf.com
1
3/30/99
1 Page IRFB11N50A
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
0.1
4.5V 20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
20µs PULSE WIDTH
4.5V
TJ = 150 °C
1
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
10
TJ = 150° C
TJ = 25° C
1
0.1
4.0
V DS= 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
9.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 11A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFB11N5OA
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
600
ID
TOP
4.9A
500 7.0A
BOTTOM 11A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
660
640
620
600
580
0.0
1.0 2.0 3.0 4.0 5.0 6.0
I av , Avalanche Current (A)
A
7.0
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRFB11N50 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFB11N50 | Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A) | International Rectifier |
IRFB11N50A | Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A) | International Rectifier |