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IRFAC42のメーカーはIntersil Corporationです、この部品の機能は「6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs」です。 |
部品番号 | IRFAC42 |
| |
部品説明 | 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs | ||
メーカ | Intersil Corporation | ||
ロゴ | |||
このページの下部にプレビューとIRFAC42ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Semiconductor
January 1998
• 6.2A and 5.4A, 600V
• rDS(ON) = 1.2Ω and 1.6Ω
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFAC40
TO-204AA
IRFAC40
IRFAC42
TO-204AA
IRFAC42
NOTE: When ordering, include the entire part number.
IRFAC40,
IRFAC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly Developmental Type TA17426.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 2156.2
1 Page IRFAC40, IRFAC42
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1300 -
COSS
160
CRSS
30
LD Measured Between Modified MOSFET
- 5.0 -
the Contact Screw on Symbol Showing the
the Flange that is
Internal Devices
Closer to Source and Inductances
Gate Pins and the
D
Center of Die
LD
pF
pF
pF
nH
G
LS
S
Internal Source Inductance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
LS
RθJC
RθJA
Measured From The
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
Free Air Operation
- 13 - nH
- - 1.0 oC/W
- - 30 oC/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
D
MIN TYP MAX UNITS
- - 6.2 A
- - 25 A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD TJ = 25oC, ISD = 6.2A, VGS = 0V, (Figure 13)
-
- 1.5
trr TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs
200 450 940
QRR TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs
1.8 3.8 7.9
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25Ω, peak IAS = 6.8A. See Figures 15, 16.
V
ns
µC
5-3
3Pages IRFAC40, IRFAC42
Typical Performance Curves Unless Otherwise Specified (Continued)
10
VDS ≥ 100V
80µs PULSE TEST
8
6
TJ = 25oC
TJ = 150oC
4
2
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
10
TJ = 150oC
1
TJ = 25oC
0.1
0
0.3 0.6 0.9 1.2
VSD, SOURCE TO DRAIN VOLTAGE (V)
1.5
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 6.2A
16
12
8
4
VDS = 120V
VDS = 240V
VDS = 360V
0
0 12 24 36 48 60
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
6-6
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFAC40 | 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
IRFAC40R | N-Channel MOSFET Transistor | Inchange Semiconductor |
IRFAC42 | 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
IRFAC42R | N-Channel MOSFET Transistor | Inchange Semiconductor |