IRFAC40 Datasheet PDF - Intersil Corporation
| Part Number | IRFAC40 | |
| Description | 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs | |
| Manufacturers | Intersil Corporation | |
| Logo |  |
|
|
There is a preview and IRFAC40 download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
Preview 1 page No Preview Available !
Semiconductor
January 1998
• 6.2A and 5.4A, 600V
• rDS(ON) = 1.2Ω and 1.6Ω
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFAC40
TO-204AA
IRFAC40
IRFAC42
TO-204AA
IRFAC42
NOTE: When ordering, include the entire part number.
IRFAC40,
IRFAC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly Developmental Type TA17426.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 2156.2
|
| |
 
IRFAC40, IRFAC42
Typical Performance Curves Unless Otherwise Specified (Continued)
10
80µs PULSE TEST
8
6
4
VGS =10V
VGS = 6.0V
VGS = 5.5V
VGS = 5.0V
2 VGS = 4.5V
VGS = 4.0V
0
0 3 6 9 12 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
VDS ≥ 100V
80µs PULSE TEST
1
0.1 TJ = 150oC
TJ = 25oC
0.01 0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
5
80µs PULSE TEST
4
3
2
VGS = 10V
VGS = 20V
3.0
ID = 3.4A
VGS = 10V
2.4
1.8
1.2
1 0.6
0
0
6
12 18
24
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
0
30 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
3000
2400
1800
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1200
COSS
600
CRSS
0 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRFAC40 electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRFAC40.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| IRFAC40 | The function is 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs. Intersil Corporation | |
| IRFAC40R | The function is N-Channel MOSFET Transistor. Inchange Semiconductor |  |
| IRFAC42 | The function is 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs. Intersil Corporation | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
IRFA
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||