DataSheet39.com

What is IRF9Z34S?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)".


IRF9Z34S Datasheet PDF - International Rectifier

Part Number IRF9Z34S
Description Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Manufacturers International Rectifier 
Logo International Rectifier Logo 


There is a preview and IRF9Z34S download ( pdf file ) link at the bottom of this page.





Total 10 Pages



Preview 1 page

No Preview Available ! IRF9Z34S datasheet, circuit

l Advanced Process Technology
l Surface Mount (IRF9Z34S)
l Low-profile through-hole (IRF9Z34L)
l 175°C Operating Temperature
l Fast Switching
l P- Channel
l Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34L) is available for low-
profile applications.
Absolute Maximum Ratings
G
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 9.913A
IRF9Z34S/L
HEXFET® Power MOSFET
D
VDSS = -60V
RDS(on) = 0.14
ID = -18A
S
D 2 Pak
T O -262
Max.
-18
-13
-72
3.7
88
0.59
± 20
370
-18
8.8
-4.5
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.7
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97

line_dark_gray
IRF9Z34S equivalent
IRF9Z34S/L


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF9Z34S electronic component.


Information Total 10 Pages
Link URL [ Copy URL to Clipboard ]
Download [ IRF9Z34S.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
IRF9Z34The function is Power MOSFET ( Transistor ). International RectifierInternational Rectifier
IRF9Z34The function is (IRF9Z30 / IRF9Z34) P-Channel Power MOSFETs. Samsung ElectronicsSamsung Electronics
IRF9Z34The function is Power MOSFET ( Transistor ). VishayVishay

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

IRF9     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search