|
|
PDF IRF9Z34L Data sheet ( Hoja de datos )
| Número de pieza | IRF9Z34L | |
| Descripción | Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF9Z34L (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
l Advanced Process Technology
l Surface Mount (IRF9Z34S)
l Low-profile through-hole (IRF9Z34L)
l 175°C Operating Temperature
l Fast Switching
l P- Channel
l Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34L) is available for low-
profile applications.
Absolute Maximum Ratings
G
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 9.913A
IRF9Z34S/L
HEXFET® Power MOSFET
D
VDSS = -60V
RDS(on) = 0.14Ω
ID = -18A
S
D 2 Pak
T O -262
Max.
-18
-13
-72
3.7
88
0.59
± 20
370
-18
8.8
-4.5
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.7
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
1 page  
IRF9Z34S/L
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF9Z34L.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF9Z34 | Power MOSFET ( Transistor ) | International Rectifier |
| IRF9Z34 | (IRF9Z30 / IRF9Z34) P-Channel Power MOSFETs |  Samsung Electronics |
| IRF9Z34 | Power MOSFET ( Transistor ) |  Vishay |
| IRF9Z34L | Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |