DataSheet.jp

IRF9Z24N の電気的特性と機能

IRF9Z24NのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9Z24N
部品説明 Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRF9Z24Nダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

IRF9Z24N Datasheet, IRF9Z24N PDF,ピン配置, 機能
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD -9.1484B
IRF9Z24N
HEXFET® Power MOSFET
D VDSS = -55V
RDS(on) = 0.175
ID = -12A
S
TO-220AB
Max.
-12
-8.5
-48
45
0.30
± 20
96
-7.2
4.5
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
3.3
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/27/97

1 Page





IRF9Z24N pdf, ピン配列
1 0 0 VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
10
20µs PULS E W IDTH
TcJ = 2 5°C
100
V GS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
10
IRF9Z24N
-4.5 V
1A
0.1 1
10 100
-VD S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
-4.5V 20µs PULSE W IDTH
1
TCJ = 1 75°C
A
0.1 1 10 100
-VD S , Drain-to-Source V oltage (V )
Fig 2. Typical Output Characteristics,
100
TJ = 2 5 °C
1 0 TJ = 1 7 5 °C
V DS = -2 5 V
20µs PULSE W IDTH
1A
4 5 6 7 8 9 10
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
2.0
ID = -12A
1.5
1.0
0.5
0.0
VGS = -10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRF9Z24N 電子部品, 半導体
IRF9Z24N
VDS
L
RG
-20V
tp
D .U .T
IAS
0 .0 1
D R IV E R
VD D
A
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
250
ID
TOP
-2.9A
-5.1 A
200 B OTTO M -7.2A
150
100
50
0A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRF9Z24N データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF9Z24

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
IRF9Z24L

Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)

International Rectifier
International Rectifier
IRF9Z24L

Power MOSFET ( Transistor )

Vishay
Vishay
IRF9Z24N

Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap