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IRF9510 の電気的特性と機能

IRF9510のメーカーはIntersil Corporationです、この部品の機能は「3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9510
部品説明 3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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IRF9510 Datasheet, IRF9510 PDF,ピン配置, 機能
Data Sheet
IRF9510
July 1999 File Number 2214.4
[ /Title
(IRF95
10)
/Sub-
ject (-
3.0A, -
100V,
1.200
Ohm,
P-Chan-
nel
Power
MOS-
FET)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
P-Chan-
nel
Power
MOS-
FET,
TO-
220AB
)
/Cre-
ator ()
/DOCI
NFO
pdf-
mark
3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17541.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9510
TO-220AB
IRF9510
NOTE: When ordering, include the entire part number.
Features
• 3.0A, 100V
• rDS(ON) = 1.200
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
[
5-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 Page





IRF9510 pdf, ピン配列
IRF9510
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
D
MIN TYP
--
--
MAX
-3.0
-12
UNITS
A
A
S
Source to Drain Diode Voltage(Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TC = 25oC, ISD = -3.0A, VGS = 0V, (Figure 13)
TJ = 150oC, ISD = -3.0A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -3.0A, dISD/dt = 100A/µs
--
- 120
- 6.0
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 31.7mH, RG = 25, peak IAS = 3.0A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
-1.5
-
-
V
ns
µC
1.2 -5
1.0
-4
0.8
-3
0.6
-2
0.4
-1
0.2
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
SINGLE PULSE
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
TJ = PDM x ZθJC x RθJC + TC
1 10
5-5


3Pages


IRF9510 電子部品, 半導体
Test Circuits and Waveforms
IRF9510
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
tP
RG
VDS
L
DUT
-
VDD
+
IAS
0.01
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
VGS
DUT
RG
RL
-
VDD
+
FIGURE 17. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
-VDS
(ISOLATED
SUPPLY)
12V
BATTERY
0.2µF 50k
0.3µF
DUT
D
G DUT
0
IG(REF)
S
+VDS
IG CURRENT
SAMPLING
ID CURRENT
SAMPLING
RESISTOR
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
tAV
0
VDD
IAS
tP
BVDSS
VDS
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON
td(ON)
tr
0
10%
tOFF
td(OFF)
tf
10%
VDS
VGS
0
90%
10%
50%
PULSE WIDTH
90%
50%
90%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
0
VDS
Qgs
VDD
0
Qgd
Qg(TOT)
VGS
IG(REF)
FIGURE 20. GATE CHARGE WAVEFORMS
5-8

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF9510

3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET

Intersil Corporation
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Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-4.0A)

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