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IRF9240 の電気的特性と機能

IRF9240のメーカーはInternational Rectifierです、この部品の機能は「TRANSISTORS P-CHANNEL(Vdss=-200V/ Rds(on)=0.5ohm/ Id=-11A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9240
部品説明 TRANSISTORS P-CHANNEL(Vdss=-200V/ Rds(on)=0.5ohm/ Id=-11A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF9240 Datasheet, IRF9240 PDF,ピン配置, 機能
PD - 90420
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS
IRF9240
-200V
RDS(on)
0.5
ID
-11A
IRF9240
200V, P-CHANNEL
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of parelleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-11
-7.0 A
-44
125 W
1.0 W/°C
±20 V
500 mJ
-11 A
12.5
mJ
-5.0 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
g
For footnotes refer to the last page
www.irf.com
1
01/24/01

1 Page





IRF9240 pdf, ピン配列
IRF9240
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF9240 電子部品, 半導体
IRF9240
VDS
L
RG
-1200VV
tp
D .U .T
IA S
0 .0 1
D R IV E R
VDD
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
-1122VV
.2µF
50K
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF9240

P-CHANNEL POWER MOSFET

Seme LAB
Seme LAB
IRF9240

-11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET

Intersil Corporation
Intersil Corporation
IRF9240

TRANSISTORS P-CHANNEL(Vdss=-200V/ Rds(on)=0.5ohm/ Id=-11A)

International Rectifier
International Rectifier
IRF9240

Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) TO-3

New Jersey Semiconductor
New Jersey Semiconductor


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