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IRF9233 の電気的特性と機能

IRF9233のメーカーはIntersil Corporationです、この部品の機能は「-5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9233
部品説明 -5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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IRF9233 Datasheet, IRF9233 PDF,ピン配置, 機能
Semiconductor
January 1998
IRF9230, IRF9231,
IRF9232, IRF9233
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm,
P-Channel Power MOSFETs
Features
• -5.5A and -6.5A, -150V and -200V
• rDS(ON) = 0.8and 1.2
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9230
TO-204AA
IRF9230
IRF9231
TO-204AA
IRF9231
IRF9232
TO-204AA
IRF9232
IRF9233
TO-204AA
IRF9233
NOTE: When ordering, use the entire part number.
Description
These devices are P-Channel enhancement mode silicon
gate power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly Developmental type TA17512.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
6-1
File Number 2226.1

1 Page





IRF9233 pdf, ピン配列
IRF9230, IRF9231, IRF9232, IRF9233
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
CISS VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11) - 550 -
COSS
- 170
-
CRSS
- 50
-
LD Measured Between the Modified MOSFET - 5.0 -
Contact Screw on the Symbol Showing the
Flange that is Closer to Internal Devices
Source and Gate Pins Inductances
and the Center of Die
D
pF
pF
pF
nH
Internal Source Inductance
LS Measured From the
Source Lead, 6mm
(0.25in) From the
G
Flange and the Source
Bonding Pad
LD
- 12.5
-
nH
LS
S
Thermal Resistance Junction to Case
Thermal Resistance
Junction to Ambient
RθJC
RθJA
Typical Socket Mount
- - 1.67 oC/W
- - 60 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
- - -6.5 A
D
- - -26 A
S
Source to Drain Diode Voltage
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TC = 25oC, ISD = -6.5A, VGS = 0V,
(Figure 13)
TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs
-
-
-
- -1.5
400 -
2.6 -
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 17.75mH, RG = 25Ω, peak IAS = 6.5A (Figures 15, 16).
V
ns
µC
6-3


3Pages


IRF9233 電子部品, 半導体
IRF9230, IRF9231, IRF9232, IRF9233
Typical Performance Curves Unless Otherwise Specified (Continued)
7.0
80µs PULSE TEST
VDS > ID(ON) x rDS(ON)MAX
5.6
TJ = -55oC
4.2 TJ = 25oC
TJ = 125oC
2.8
1.4
-100
-10 TJ = 150oC
-1.0 TJ = 25oC
0
0 -3 -6 -9 -12 -15
I D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-0.1
-0.4
-0.6 -0.8
-1.0 -1.2 -1.4
-1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
ID = -6.5A
FOR TEST CIRCUIT
SEE FIGURES 19, 20
-5
-10
IRF9230, IRF9232 VDS = -160V
VDS = -100V
VDS = -40V
-15
0 8 16 24 32 40
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
6-6

6 Page



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共有リンク

Link :


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