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PDF IRF9232 Data sheet ( Hoja de datos )
| Número de pieza | IRF9232 | |
| Descripción | -5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Semiconductor
January 1998
IRF9230, IRF9231,
IRF9232, IRF9233
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm,
P-Channel Power MOSFETs
Features
• -5.5A and -6.5A, -150V and -200V
• rDS(ON) = 0.8Ω and 1.2Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9230
TO-204AA
IRF9230
IRF9231
TO-204AA
IRF9231
IRF9232
TO-204AA
IRF9232
IRF9233
TO-204AA
IRF9233
NOTE: When ordering, use the entire part number.
Description
These devices are P-Channel enhancement mode silicon
gate power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly Developmental type TA17512.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
6-1
File Number 2226.1
1 page  
IRF9230, IRF9231, IRF9232, IRF9233
Typical Performance Curves Unless Otherwise Specified (Continued)
-15
80µsPULSE TEST
-12
-9
-6
VGS = -10V
VGS = -9V
VGS = -8V
VGS = -7V
VGS = -6V
-15
80µs PULSE TEST
VDS ≥ I D(ON) x rDS(ON) MAX
-12
TJ = 125oC
-9 TJ = 25oC
TJ = -55oC
-6
-3 VGS = -5V
VGS = -4V
0
0 -2 -4 -6 -8 -10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
-3
0
0 -2 -4 -6 -8
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
-10
2.0
2.0µs PULSE TEST
1.6
2.5
VGS = -10V, ID = -2.0A
2.0
1.2 1.5
VGS = - 10V
0.8 1.0
VGS = - 20V
0.4 0.5
0
0 -5 -10 -15 -20 -25
ID, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.25
ID = 250µA
1.15
1.05
0
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2000
1600
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1200
0.95
800 CISS
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
400
CRSS
00
COSS
-10 -20 -30 -40
VDS, DRAIN TO SOURCE VOLTAGE (V)
-50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6-5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF9232.PDF ] | |
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