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IRF9130 の電気的特性と機能

IRF9130のメーカーはIntersil Corporationです、この部品の機能は「-12A/ -100V/ 0.30 Ohm/ P-Channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9130
部品説明 -12A/ -100V/ 0.30 Ohm/ P-Channel Power MOSFET
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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IRF9130 Datasheet, IRF9130 PDF,ピン配置, 機能
Data Sheet
IRF9130
February 1999 File Number 2220.3
-12A, -100V, 0.30 Ohm, P-Channel Power
MOSFET
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9130
TO-204AA
IRF9130
NOTE: When ordering, use the entire part number.
Features
• -12A, -100V
• rDS(ON) = 0.30
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
5-8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 Page





IRF9130 pdf, ピン配列
IRF9130
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Diode
G
MIN TYP MAX UNITS
- - -12 A
D
- - -48 A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TC = 25oC, ISD = -12A, VGS = 0V (Figure 13)
TJ =150oC, ISD = -12A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -12A, dISD/dt = 100A/µs
- - -1.5
- 300 -
- 1.8 -
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 5.2mH, RG = 25Ω, peak IAS = 12A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
V
ns
µC
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TA, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-12.0
-9.6
-7.2
-4.8
-2.4
0
25 50
75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1 10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
5-10


3Pages


IRF9130 電子部品, 半導体
Test Circuits and Waveforms
IRF9130
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
tP
RG
VDS
L
DUT
-
VDD
+
IAS
0.01
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
RL
VGS
DUT
RG
-
VDD
+
FIGURE 17. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
-VDS
(ISOLATED
SUPPLY)
12V
BATTERY
0.2µF 50k
0.3µF
DUT
D
G DUT
0
Ig(REF)
S
+VDS
IG CURRENT
SAMPLING
ID CURRENT
SAMPLING
RESISTOR
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
tAV
0
VDD
IAS
tP
BVDSS
VDS
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON
td(ON)
tr
0
10%
tOFF
td(OFF)
tf
10%
VDS
VGS
0
90%
10%
50%
PULSE WIDTH
90%
50%
90%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
0
VDS
Qgs
VDD
0
Qgd
Qg(TOT)
VGS
IG(REF)
FIGURE 20. GATE CHARGE WAVEFORMS
5-13

6 Page



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