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IRF840ASのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)」です。 |
部品番号 | IRF840AS |
| |
部品説明 | Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF840ASダウンロード(pdfファイル)リンクがあります。 Total 10 pages
PD- 91901B
SMPS MOSFET
IRF840AS
IRF840AL
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
VDSS
500V
RDS(on) max
0.85Ω
ID
8.0A
Benefits
l Low Gate Charge Qg Results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN 1001)
D2Pak
IRF840AS
TO-262
IRF840AL
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
8.0
5.1
32
125
3.1
1.0
± 30
5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Two Transistor Forward
l Haft Bridge
l Full Bridge
Notes through are on page 10
www.irf.com
1
12/16/99
1 Page 100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRF840AS/L
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10 TJ = 150 ° C
TJ = 25 ° C
1
0.1
4.0
V DS= 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
9.0
Fig 3. Typical Transfer Characteristics
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3.0 ID = 78.04A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF840AS/L
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
1200
1000
800
TOP
BOTTOM
ID
3.6A
5.1A
8.0A
600
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
600
610
600
580
590
580
560
570
560
540 550
540
0.0
520
0.0 1.0
1.0 2.0 3.0 4.0 5.0
2.0
IAV3.,0Aval4a.n0che
Current ( A)
5.0 6.0
7.0
IAV , Avalanche Current ( A)
6.0
8.0
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ IRF840AS データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF840A | Power MOSFET ( Transistor ) | Vishay |
IRF840A | Power MOSFET ( Transistor ) | Fairchild Semiconductor |
IRF840A | Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) | International Rectifier |
IRF840A | N-Channel Power MOSFET / Transistor | nELL |