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PDF IRF830 Data sheet ( Hoja de datos )
| Número de pieza | IRF830 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ETC | |
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Bay Linear
Linear Excellence
POWER MOSFET
IRF830
Advance Information
Description
The Bay Linear MOSFET’s provide the designers with the best
combination of fast switching, ruggedized device design, low
0n-resistance and low cost-effectiveness.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D2 surface
mount power package with a power dissipation up to 2 Watts
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
VDSS = 500V
RDS (ON) = 1.5 Ω
ID = 4.5A
Ordering Information
Device
Package
IRL830T
IRL830S
TO-220
TO-263 ( D2 )
Temp.
0 to 150°C
0 to 150°C
Absolute Maximum Rating
Parameter
ID@ TC =25°C
ID@ TC =100°C
IDM
PD @ TC =25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @10V
Continuous Drain Current, VGS @10V
Pulsed Drain Current (1)
Power Dissipation
Linear Derating Factor
Linear Derating Factor ( PCB Mount, D2 ) (1)
Gate-to- Source Voltage
Single Pulse Avalanche Energy (2)
Avalanche Current (1)
Repetitive Avalanche Energy (1)
Peak Diode Recovery dv/dt (3)
Junction & Storage Temperature Range
Soldering Temperature, for 10 seconds
Max
4.5
2.9
18
74
0.59
0.025
±20
280
4.5
7.4
3.5
−55 to +150
300 (1.6mm from case)
Unit
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJC Junction-to Case
RθCS Case-to-Sink, Flat, Greased Surface ( TO-220)
RθJA Junction-to Ambient ( PCB Mount, D2 )
RθJA Junction-to Ambient
Min
-
-
-
Typ
-
0.50
-
Max
1.7
40
62
Units
°C/W
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet IRF830.PDF ] | |
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