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What is IRF830?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET".


IRF830 Datasheet PDF - STMicroelectronics

Part Number IRF830
Description N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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® IRF830
N - CHANNEL 500V - 1.35- 4.5A - TO-220
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
IRF830
500 V
< 1.5
4.5 A
s TYPICAL RDS(on) = 1.35
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAYprocess. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VDS Drain-source Voltage (VGS = 0)
500
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
500
± 20
4.5
2.9
IDM ( )
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
18
100
Derating Factor
0.8
dv/dt(1) Peak Diode Recovery voltage slope
3.5
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
() Pulse width limited by safe operating area
(1) ISD 4.5A, di/dt 75 A/µs, VDD V(BR)DSS, Tj TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
August 1998
1/8

line_dark_gray
IRF830 equivalent
Normalized Gate Threshold Voltage vs
Temperature
IRF830
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8


line_dark_gray

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IRF830 MOSFET Transistor


1. 500V, 4.5A, HEXFET Power MOSFET

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Featured Datasheets

Part NumberDescriptionMFRS
IRF830The function is PowerMOS transistor Avalanche energy rated. NXP SemiconductorsNXP Semiconductors
IRF830The function is N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET. STMicroelectronicsSTMicroelectronics
IRF830The function is N-CHANNEL ENHANCEMENT MODE. TRSYSTRSYS

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