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PDF IRF820 Data sheet ( Hoja de datos )
| Número de pieza | IRF820 | |
| Descripción | N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF820 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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® IRF820
N - CHANNEL 500V - 2.5 Ω - 2.5 A - TO-220
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
IRF820
500 V
<3Ω
2.5 A
s TYPICAL RDS(on) = 2.5 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VDS Drain-source Voltage (VGS = 0)
500
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
500
± 20
2.5
1.6
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
10
80
Derating Factor
0.64
dv/dt(1) Peak Diode Recovery voltage slope
3.5
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD ≤2.5 A, di/dt ≤ 50 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
August 1998
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
IRF820
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF820.PDF ] | |
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