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PDF IRF7811A Data sheet ( Hoja de datos )
| Número de pieza | IRF7811A | |
| Descripción | Chipset for DC-DC Converters | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7811A (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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PD - 93810
PD - 93811
IIRRFF7788009A/IRF7811A
PROVISIONAL DATASHEET
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
HEXFET® Chipset for DC-DC Converters
S1
S2
AA
8D
7D
Description
These new devices employ advanced HEXFET® Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge.The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
SO-8
S3
G4
6D
5D
Top View
Both the IRF7809A and IRF7811A have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including RDS(on), gate charge
and Cdv/dt-induced turn-on immunity.The IRF7809A offers
particulary low RDS(on) and high Cdv/dt immunity for
synchronous FET applications. The IRF7811A offers an
extremely low combination of Q & R for reduced
sw DS(on)
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
T = 25°C
A
TL = 90°C
Power Dissipation
T = 25°C
A
TL = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
www.irf.com
Symbol
VDS
VGS
I
D
IDM
P
D
TJ, TSTG
I
S
ISM
RθJA
RθJL
VDS
RDS(on)
QG
Qsw
Q
oss
DEVICE RATINGS
IRF7809A
30V
8.5 mΩ
73 nC
22.5 nC
30 nC
IRF7811A
28V
12 mΩ
23 nC
7 nC
31 nC
IRF7809A
IRF7811A
30 28
±12
14.5
11.4
14.2
11.2
100 100
2.5
2.4
–55 to 150
2.5 2.5
50 50
Max.
50
25
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
01/19/00
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IRF7811A.PDF ] | |
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