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PDF IRF7807VD2 Data sheet ( Hoja de datos )
| Número de pieza | IRF7807VD2 | |
| Descripción | FETKY MOSFET / SCHOTTKY DIODE | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRF7807VD2 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PD-94079
IRF7807VD2
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
Description
The FETKY™ family of Co-Pack HEXFETMOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics.The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
SO-8
A/S 1
8 K/D
A/S 2
7 K/D
A/S 3
6 K/D
G4
5 K/D
D
Top View
DEVICE CHARACTERISTICSU
RDS(on)
Q
G
Qsw
Qoss
IRF7807VD2
17mΩ
9.5nC
3.4nC
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS ≥ 4.5V)
Pulsed Drain CurrentQ
70°C
Power DissipationS
25°C
70°C
Schottky and Body Diode
25°C
Average ForwardCurrentT
70°C
Junction & Storage Temperature Range
Thermal Resistance
Parameter
Maximum Junction-to-AmbientS
Maximum Junction-to-Lead
www.irf.com
Symbol
V
DS
VGS
ID
IDM
PD
IF (AV)
TJ, TSTG
RθJA
RθJL
Max.
30
±20
8.3
6.6
66
2.5
1.6
3.7
2.3
–55 to 150
Max.
50
20
Units
V
A
W
A
°C
Units
°C/W
°C/W
1
03/05/01
1 page  
IRF7807VD2
2.0 ID = 7.0A
1.5
0.030
0.025
1.0 0.020
ID = 7.0A
0.5 0.015
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 5. Normalized On-Resistance
Vs. Temperature
0.010
2.0
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate -to -Source Voltage (V)
Fig 7. On-Resistance Vs. Gate Voltage
70
VGS
TOP
60
4.5V
3.5V
3.0V
2.5V
50 2.0V
BOTTOM 0.0V
40
70
VGS
60 TOP
4.5V
3.5V
3.0V
2.5V
50 2.0V
BOTTOM 0.0V
40
30 30
20
10
0
0
0.0 V
380µs PULSE WIDTH
Tj = 25°C
0.2 0.4 0.6 0.8
VSD, Source-to-Drain Voltage (V)
1
20
10
0
0
O.OV
380µS PULSE WIDTH
Tj = 150°C
0.2 0.4 0.6 0.8
VSD, Source-to-Drain Voltage (V)
1
Fig 7. Typical Reverse Output Characteristics Fig 8. Typical Reverse Output Characteristics
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7807VD2.PDF ] | |
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