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IRF7807D1 の電気的特性と機能

IRF7807D1のメーカーはInternational Rectifierです、この部品の機能は「MOSFET / SCHOTTKY DIODE」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7807D1
部品説明 MOSFET / SCHOTTKY DIODE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7807D1 Datasheet, IRF7807D1 PDF,ピン配置, 機能
PD- 93761
IRF7807D1
FETKYMOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
SO-8
A/S 1
8 K/D
A/S 2
7 K/D
A/S 3
6 K/D
G4
5 K/D
D
Top View
Description
The FETKYfamily of Co-Pack HEXFET®MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics.The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS 4.5V)
Pulsed Drain Current
Power Dissipation
25°C
70°C
25°C
70°C
VDS
VGS
ID
IDM
PD
Schottky and Body Diode
Average ForwardCurrent„
25°C
70°C
IF (AV)
Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
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RθJA
Device Features (Max Values)
VDS
RDS(on)
Qg
Qsw
Qoss
IRF7807D1
30V
25m
14nC
5.2nC
18.4nC
Max.
30
±12
8.3
6.6
66
2.5
1.6
3.5
2.2
–55 to 150
Max.
50
Units
V
A
W
A
°C
Units
°C/W
1
11/8/99

1 Page





IRF7807D1 pdf, ピン配列
100
VGS
TOP
4.5V
3.5V
3.0V
BOTTOM 2.5V
10
2.5V
IRF7807D1
100
VGS
TOP
4.5V
3.5V
3.0V
BOTTOM 2.5V
10
2.5V
1
0.1
380µs PULSE WIDTH
Tj = 25°C
1
VDS, Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
1
0.1
380µs PULSE WIDTH
Tj = 150°C
1
VDS, Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
60
VGS
TOP
4.5V
50
3.5V
3.0V
2.5V
2.0V
40 BOTTOM 0.0V
30
20
10
0
0
0.0V
380µs PULSE WIDTH
Tj = 25°C
0.2 0.4 0.6 0.8
VSD, Source-to-Drain Voltage (V)
1
70
VGS
TOP
4.5V
60 3.5V
3.0V
2.5V
50 2.0V
BOTTOM 0.0V
40
30
20
10
0
0
380µS PULSE WIDTH
0.0V Tj = 150°C
0.2 0.4 0.6 0.8
VSD, Source-to-Drain Voltage (V)
1
Fig 3. Typical Reverse Output Characteristics Fig 4. Typical Reverse Output Characteristics
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3


3Pages


IRF7807D1 電子部品, 半導体
IRF7807D1
MOSFET , Body Diode & Schottky Diode Characteristics
100
Tj = 125°C
Tj = 25°C
10
1
100
10
1
0.1
0.01
0.001
Tj = 150°C
125°C
100°C
75°C
50°C
25°C
0.0001
0
5 10 15 20 25
Reverse Voltage - VR (V)
30
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse Voltage
0.1
0.0
0.2 0.4 0.6 0.8 1.0
Forward Voltage Drop - V F ( V )
1.2
Fig. 12 - Typical Forward Voltage Drop
Characteristics
6
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6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF7807D1

MOSFET / SCHOTTKY DIODE

International Rectifier
International Rectifier
IRF7807D1PBF

HEXFET Power MOSFET

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IRF7807D2

MOSFET / SCHOTTKY DIODE

International Rectifier
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IRF7807D2PbF

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