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IRF7807A の電気的特性と機能

IRF7807AのメーカーはInternational Rectifierです、この部品の機能は「Chip-Set for DC-DC Converters」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7807A
部品説明 Chip-Set for DC-DC Converters
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7807A Datasheet, IRF7807A PDF,ピン配置, 機能
PD – 91747C
IRF7807/IRF7807A
HEXFET® Chip-Set for DC-DC Converters
• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
Description
These new devices employ advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make them
ideal for high efficiency DC-DC Converters that power
the latest generation of mobile microprocessors.
A pair of IRF7807 devices provides the best cost/
performance solution for system voltages, such as 3.3V
and 5V.
SO-8
S1
S2
S3
G4
A
8D
7D
6D
5D
Top View
Device Features
IRF7807 IRF7807A
Vds 30V 30V
Rds(on) 25m25m
Qg 17nC 17nC
Qsw
5.2nC
Qoss 16.8nC 16.8nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS 4.5V)
Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
Symbol
VDS
VGS
I
D
IDM
PD
TJ, TSTG
I
S
ISM
IRF7807
IRF7807A
30
±12
8.3 8.3
6.6 6.6
66 66
2.5
1.6
–55 to 150
2.5 2.5
66 66
Units
V
A
W
°C
A
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
RθJA
Max.
50
Units
°C/W
www.irf.com
1
10/10/00

1 Page





IRF7807A pdf, ピン配列
IRF7807/IRF7807A
Power MOSFET Selection for DC/DC
Converters
Control FET
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called the
Control FET, are impacted by the Rds(on) of the MOSFET,
but these conduction losses are only about one half of
the total losses.
Power losses in the control switch Q1 are given by;
P =P
+P +P +P
loss
conduction
switching
drive
output
This can be expanded and approximated by;
( )Ploss = Irms 2 × Rds(on)
+
I
×
Qgd
ig
×
Vin
×
f 
+
I
×
Qgs2
ig
× Vin
×
f 
( )+ Qg × Vg × f
+
Qoss
2
× Vin
×
f
This simplified loss equation includes the terms Qgs2
and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source charge
that is included in all MOSFET data sheets.The impor-
tance of splitting this gate-source charge into two sub
elements, Qgs1 and Qgs2, can be seen from Fig 1.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold volt-
age has been reached (t1) and the time the drain cur-
rent rises to Idmax (t2) at which time the drain voltage
begins to change. Minimizing Qgs2 is a critical factor in
reducing switching losses in Q1.
Qoss is the charge that must be supplied to the output
capacitance of the MOSFET during every switching
cycle. Figure 2 shows how Qoss is formed by the paral-
lel combination of the voltage dependant (non-linear)
capacitance’s Cds and Cdg when multiplied by the power
supply input buss voltage.
4
Drain Current
t2 t3
t1
VGTH
t0
1
Gate Voltage
2
Drain Voltage
Figure 1: Typical MOSFET switching waveform
Synchronous FET
The power loss equation for Q2 is approximated
by;
Ploss
=
Pconduction
+
Pdrive
+
P*
output
( )Ploss =
I2
rms
×
Rds(on)
( )+ Qg × Vg × f
( )+  Qoss
2
× Vin
×
f
+
Qrr × Vin ×
f
*dissipated primarily in Q1.
www.irf.com
3


3Pages


IRF7807A 電子部品, 半導体
IRF7807/IRF7807A
IRF7807
10
IRF7807A
10
TJ = 150 °C
1
TJ = 25 °C
TJ = 150 °C
1
TJ = 25 °C
0.1
0.4
VGS = 0 V
0.5 0.6 0.7 0.8
VSD,Source-to-Drain Voltage (V)
0.9
Figure 11.Typical Source-Drain Diode Forward Voltage
0.1
0.4
VGS = 0 V
0.5 0.6 0.7 0.8
VSD,Source-to-Drain Voltage (V)
0.9
Figure 12.Typical Source-Drain Diode Forward Voltage
100
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
0.1
0.001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Figure 13. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1000
6 www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF7807

Chip-Set for DC-DC Converters

International Rectifier
International Rectifier
IRF7807A

Chip-Set for DC-DC Converters

International Rectifier
International Rectifier
IRF7807APbF

HEXFET Chip-Set for DC-DC Converters

International Rectifier
International Rectifier
IRF7807APbF-1

HEXFET Chip-Set for DC-DC Converters

International Rectifier
International Rectifier


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