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IRF7701のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-12V)」です。 |
部品番号 | IRF7701 |
| |
部品説明 | Power MOSFET(Vdss=-12V) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7701ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
PD - 93940
VDSS
-12V
IRF7701
HEXFET® Power MOSFET
RDS(on) max
0.011@VGS = -4.5V
0.015@VGS = -2.5V
0.022@VGS = -1.8V
ID
-10A
-8.5A
-7.0A
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
1
2
3G
4
1= D
2= S
3= S
4= G
D8
7
6
S5
8= D
7= S
6= S
5= D
TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
±10
±8.0
±80
1.5
0.96
12
± 8.0
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
1
6/21/00
1 Page 100
10
VGS
TOP -7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
1
-1.0V
0.1
0.01
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
-VDS , Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
100
10
VGS
TOP
-7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
IRF7701
-1.0V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1
-VDS , Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
100
TJ = 25 ° C
TJ = 150° C
10
1
0.1
1.0
V DS = -10V
20µs PULSE WIDTH
1.5 2.0 2.5
-VGS, Gate-to-Source Voltage (V)
3.0
Fig 3. Typical Transfer Characteristics
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2.0 ID = -10A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7701
0.05 0.020
0.04
0.015
0.03 VGS = -2.5V
0.02 ID = -10A
0.010
0.01 VGS = -4.5V
0.00
1.5
2.5 3.5
-VGS, Gate -to -Source Voltage (V)
4.5
Fig 11. Typical On-Resistance Vs. Gate
Voltage
0.005
0
20 40 60 80
-ID , Drain Current (A)
100
Fig 12. Typical On-Resistance Vs. Drain
Current
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ IRF7701 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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