IRF7606 Datasheet PDF - International Rectifier
| Part Number | IRF7606 | |
| Description | Power MOSFET(Vdss=-30V/ Rds(on)=0.09ohm) | |
| Manufacturers | International Rectifier | |
| Logo |  |
|
|
There is a preview and IRF7606 download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
Preview 1 page No Preview Available !
PD - 9.1264C
IRF7606
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
S
S
S
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
1
A
8D
2 7D
3 6D
4 5D
Top View
VDSS = -30V
RDS(on) = 0.09Ω
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
MICRO8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-3.6
-2.9
-19
1.8
14
± 20
-5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient
Typ.
–––
Max.
70
Units
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97
|
| |
 
IRF7606
-10V
QGS
VG
QG
QGD
Charge
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF7606 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRF7606.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| IRF7601 | The function is Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm). International Rectifier | |
| IRF7601PBF | The function is Power MOSFET ( Transistor ). International Rectifier | |
| IRF7603 | The function is Power MOSFET(Vdss=30V/ Rds(on)=0.035ohm). International Rectifier | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
IRF7
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||