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IRF7603 の電気的特性と機能

IRF7603のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=30V/ Rds(on)=0.035ohm)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7603
部品説明 Power MOSFET(Vdss=30V/ Rds(on)=0.035ohm)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7603 Datasheet, IRF7603 PDF,ピン配置, 機能
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
S
S
S
G
PD - 9.1262D
IRF7603
HEXFET® Power MOSFET
AA
1 8D
2 7D
3 6D
4 5D
T o p V ie w
VDSS = 30V
RDS(on) = 0.035
M ic r o 8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ,TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
5.6
4.5
30
1.8
14
± 20
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient„
Typ.
–––
Max.
70
Units
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97

1 Page





IRF7603 pdf, ピン配列
1 0 0 VGS
TOP 15V
10 V
7.0 V
5.5 V
4.5 V
4.0 V
3.5 V
BOTT OM 3.0V
10
1 3.0V
0.1
0.1
20µs P ULSE WIDTH
TJ = 25 °C
A
1 10
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
1
0.1
3.0
VDS = 10V
20µs PU LSE W ID TH
A
3.5 4.0 4.5 5.0 5.5
VGS , Ga te-to-So urce Voltage (V )
Fig 3. Typical Transfer Characteristics
IRF7603
1 0 0 VGS
TOP 15V
10 V
7.0 V
5.5 V
4.5 V
4.0 V
3.5 V
BOTT OM 3.0V
10
1
3.0 V
0.1
0.1
20µs P ULSE WIDTH
TJ = 15 0°C
A
1 10
V D S, D rain-to-S ource Voltage (V)
Fig 2. Typical Output Characteristics
2.0
ID = 3.7A
1.5
1.0
0.5
0.0
-60
V GS = 10V
A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRF7603 電子部品, 半導体
IRF7603
D.U.T
+
‚
-

RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
„
-+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
VDD
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 12. For N-Channel HEXFETS

6 Page



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共有リンク

Link :


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