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IRF7506 の電気的特性と機能

IRF7506のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-30V/ Rds(on)=0.27ohm)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7506
部品説明 Power MOSFET(Vdss=-30V/ Rds(on)=0.27ohm)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7506 Datasheet, IRF7506 PDF,ピン配置, 機能
PD - 9.1268F
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
IRF7506
HEXFET® Power MOSFET
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
To p V iew
VDSS = -30V
RDS(on) = 0.27
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device
for applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will
allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA
cards.
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
MICRO8
Max.
-1.7
-1.4
-9.6
1.25
10
± 20
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient„
Typ.
–––
Max.
100
Units
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97

1 Page





IRF7506 pdf, ピン配列
IRF7506
1 0 VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
1
-3.0 V
1 0 VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
1
-3.0V
0.1
0.1
20µs P ULSE WIDTH
TJ = 25 °C
A
1 10
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
0.1
0.1
20µs P ULSE WIDTH
TJ = 15 0°C
A
1 10
-VD S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
10
TJ = 25°C
TJ = 150°C
1
2.0
ID = -1.2A
1.5
1.0
0.1
3.0
V DS = -1 0 V
20µs PULSE W IDTH
4.0 5.0 6.0 7.0A
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
0.5
0.0
-60
VGS = -10V
A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRF7506 電子部品, 半導体
IRF7506
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
‚
-
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
„
-+

RG
VGS
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
[VDD]
Ripple 5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 12. For P-Channel HEXFETS

6 Page



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共有リンク

Link :


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