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IRF7506のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-30V/ Rds(on)=0.27ohm)」です。 |
部品番号 | IRF7506 |
| |
部品説明 | Power MOSFET(Vdss=-30V/ Rds(on)=0.27ohm) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7506ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 9.1268F
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
IRF7506
HEXFET® Power MOSFET
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
To p V iew
VDSS = -30V
RDS(on) = 0.27Ω
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device
for applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will
allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA
cards.
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
MICRO8
Max.
-1.7
-1.4
-9.6
1.25
10
± 20
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient
Typ.
–––
Max.
100
Units
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97
1 Page IRF7506
1 0 VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
1
-3.0 V
1 0 VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
1
-3.0V
0.1
0.1
20µs P ULSE WIDTH
TJ = 25 °C
A
1 10
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
0.1
0.1
20µs P ULSE WIDTH
TJ = 15 0°C
A
1 10
-VD S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
10
TJ = 25°C
TJ = 150°C
1
2.0
ID = -1.2A
1.5
1.0
0.1
3.0
V DS = -1 0 V
20µs PULSE W IDTH
4.0 5.0 6.0 7.0A
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
0.5
0.0
-60
VGS = -10V
A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages IRF7506
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
-
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-+
RG
VGS
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
[VDD]
Ripple ≤ 5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 12. For P-Channel HEXFETS
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ IRF7506 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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