DataSheet.jp

IRF7492 の電気的特性と機能

IRF7492のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7492
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRF7492ダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

IRF7492 Datasheet, IRF7492 PDF,ピン配置, 機能
Applications
l High frequency DC-DC converters
VDSS
200V
PD - 94498
IRF7492
HEXFET® Power MOSFET
RDS(on) max
ID
79m@VGS = 10V 3.7A
Benefits
l Low Gate to Drain Charge to Reduce
S
Switching Losses
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
dv/dt
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
200
± 20
3.7
3.0
30
2.5
0.02
9.5
-55 to + 150
300 (1.6mm from case )
Units
V
V
A
W
W/°C
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
06/27/02

1 Page





IRF7492 pdf, ピン配列
IRF7492
100
VGS
TOP
15V
12V
10
10V
8.0V
7.0V
6.5V
6.0V
1 BOTTOM 5.5V
0.1 5.5V
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
10 6.0V
BOTTOM 5.5V
5.5V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 150°C
TJ = 25°C
1.00
0.10
4.0
VDS = 50V
20µs PULSE WIDTH
5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0
I D = 3.7A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7492 電子部品, 半導体
IRF7492
100
90
80
VGS = 10V
70
60
50
40
0
5 10 15 20 25
ID , Drain Current (A)
30
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
500
400
300
200
ID = 3.7A
100
0
5 6 7 8 9 10 11 12 13 14 15
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
300
ID
TOP
2.0A
250 3.5A
BOTTOM
4.4A
200
150
V (B R )D SS
tp
IAS
VDS
L
RG
20V
tp
D .U .T
IA S
0.01
15V
DRIVE R
+
- VD D
A
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
100
50
0
25 50 75 100
Starting Tj, Junction Temperature
125
( ° C)
150
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRF7492 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF7490

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF7490PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF7492

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF7492PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap