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IRF7492のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF7492 |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7492ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Applications
l High frequency DC-DC converters
VDSS
200V
PD - 94498
IRF7492
HEXFET® Power MOSFET
RDS(on) max
ID
79mΩ@VGS = 10V 3.7A
Benefits
l Low Gate to Drain Charge to Reduce
S
Switching Losses
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
dv/dt
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
200
± 20
3.7
3.0
30
2.5
0.02
9.5
-55 to + 150
300 (1.6mm from case )
Units
V
V
A
W
W/°C
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
06/27/02
1 Page IRF7492
100
VGS
TOP
15V
12V
10
10V
8.0V
7.0V
6.5V
6.0V
1 BOTTOM 5.5V
0.1 5.5V
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
10 6.0V
BOTTOM 5.5V
5.5V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 150°C
TJ = 25°C
1.00
0.10
4.0
VDS = 50V
20µs PULSE WIDTH
5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0
I D = 3.7A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7492
100
90
80
VGS = 10V
70
60
50
40
0
5 10 15 20 25
ID , Drain Current (A)
30
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
500
400
300
200
ID = 3.7A
100
0
5 6 7 8 9 10 11 12 13 14 15
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
300
ID
TOP
2.0A
250 3.5A
BOTTOM
4.4A
200
150
V (B R )D SS
tp
IAS
VDS
L
RG
20V
tp
D .U .T
IA S
0.01Ω
15V
DRIVE R
+
- VD D
A
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
100
50
0
25 50 75 100
Starting Tj, Junction Temperature
125
( ° C)
150
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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