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PDF IRF7474 Data sheet ( Hoja de datos )

Número de pieza IRF7474
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7474 Hoja de datos, Descripción, Manual

PD- 94097
IRF7474
HEXFET® Power MOSFET
Applications
l Telecom and Data-Com 24 and 48V
input DC-DC converters
VDSS
100V
RDS(on) max
ID
63m@VGS = 10V 4.5A
l Motor Control
l Uninterruptible Power Supply
Benefits
l Low On-Resistance
l High Speed Switching
S1
A
A
8D
l Low Gate Drive Current Due to Improved S
Gate Charge Characteristic
l Improved Avalanche Ruggedness and
S
Dynamic dv/dt
G
2
3
4
7D
6D
5D
l Fully Characterized Avalanche Voltage
and Current
T op V iew
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Max.
4.5
3.6
36
2.5
0.02
± 20
5.5
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
9/3/01

1 page




IRF7474 pdf
IRF7474
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.00001
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
10
5

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