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IRF7466のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=30V/ Id=11A)」です。 |
部品番号 | IRF7466 |
| |
部品説明 | Power MOSFET(Vdss=30V/ Id=11A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7466ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD- 93884C
SMPS MOSFET
IRF7466
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
VDSS
30V
RDS(on) max(mΩ) ID
12.5@VGS = 10V 11A
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 20
11
9.0
90
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
3/25/01
1 Page 1000
100
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10
1
2.7V
0.1
0.01
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
IRF7466
10
2.7V
20µs PULSE WIDTH
TJ = 150 °C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 150° C
10
TJ = 25° C
1
0.1
2.5
V DS= 15V
20µs PULSE WIDTH
3.0 3.5 4.0 4.5
VGS, Gate-to-Source Voltage (V)
5.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = 11A
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7466
0.06
0.025
0.04
0.020
0.015
ID = 11A
0.02 VGS = 4.5V
0.00
0
VGS = 10V
20 40 60 80
ID , Drain Current (A)
100
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
0.010
0.005
0.000
3.0
4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gate -to -Source Voltage (V)
10.0
Fig 13. On-Resistance Vs. Gate Voltage
600
ID
TOP
3.9A
500 7.0A
BOTTOM 8.8A
400
300
V (B R )D SS
tp
IAS
VDS
L
RG
20V
tp
D .U .T
IA S
0.01Ω
15V
DRIVE R
+
- VD D
A
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRF7466 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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