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IRF7465 の電気的特性と機能

IRF7465のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=150V/ Id=1.9A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7465
部品説明 Power MOSFET(Vdss=150V/ Id=1.9A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7465 Datasheet, IRF7465 PDF,ピン配置, 機能
SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
PD-93896
IRF7465
HEXFET® Power MOSFET
RDS(on) max
ID
0.28@VGS = 10V 1.9A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
T op V iew
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1.9
1.5
15
2.5
0.02
± 30
7.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
2/8/01

1 Page





IRF7465 pdf, ピン配列
IRF7465
100
10
VGS
TOP
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
1
6.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.5V
10
7.0V
6.5V
BOTTOM 6.0V
1
6.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10 TJ = 150° C
TJ = 25°C
1
0.1
6.0
V DS= 25V
20µs PULSE WIDTH
7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 1.9A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7465 電子部品, 半導体
IRF7465
0.40
0.36
0.32
VGS = 10V
0.28
0.24
0.20
0
4 8 12
ID , Drain Current (A)
16
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
0.50
0.45
0.40
0.35
0.30 ID = 1.14A
0.25
0.20
6
8 10 12 14
VGS, Gate -to -Source Voltage (V)
16
Fig 13. On-Resistance Vs. Gate Voltage
100
ID
TOP
0.8A
1.5A
80 BOTTOM 1.9A
60
40
V (B R )D SS
tp
IAS
VDS
L
RG
20V
tp
D .U .T
IA S
0.01
15V
DRIVE R
+
- VD D
A
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com

6 Page



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Link :


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