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PDF IRF7463 Data sheet ( Hoja de datos )

Número de pieza IRF7463
Descripción Power MOSFET(Vdss=30V/ Rds(on)max=0.008ohm/ Id=14A)
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7463 Hoja de datos, Descripción, Manual

PD- 93843A
SMPS MOSFET
IRF7463
Applications
l High Frequency DC-DC Converters
with Synchronous Rectification
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max
0.008
ID
14A
Benefits
l Ultra-Low RDS(on) at 4.5V VGS
l Low Charge and Low Gate Impedance to
Reduce Switching Losses
l Fully Characterized Avalanche Voltage
and Current
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
14
11
110
2.5
1.6
0.02
± 12
-55 to + 150
Units
A
W
W/°C
V
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient†
Max.
50
Units
°C/W
Typical SMPS Topologies
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes  through † are on page 7
www.irf.com
1
3/30/00

1 page




IRF7463 pdf
IRF7463
5000
4000
3000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1000
Coss
Crss
0
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
10
ID = 14A
8
VDS = 24V
6
4
2
0
0 10 20 30 40 50
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5

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