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PDF IRF7452 Data sheet ( Hoja de datos )

Número de pieza IRF7452
Descripción Power MOSFET(Vdss=100V/ Rds(on)max=0.060ohm/ Id=4.5A)
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7452 Hoja de datos, Descripción, Manual

PD- 93897C
SMPS MOSFET
IRF7452
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
VDSS
100V
RDS(on) max
0.060
ID
4.5A
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
S
Fully Characterized Capacitance Including S
Effective COSS to Simplify Design, (See
App. Note AN1001)
S
Fully Characterized Avalanche Voltage G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
4.5
3.6
36
2.5
0.02
± 30
3.5
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input
with Passive Reset Forward Converter Primary
Notes through are on page 8
www.irf.com
1
11/23/01

1 page




IRF7452 pdf
IRF7452
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
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