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IRF7450のメーカーはInternational Rectifierです、この部品の機能は「SMPS MOSFET」です。 |
部品番号 | IRF7450 |
| |
部品説明 | SMPS MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7450ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
PD- 93893A
IRF7450
HEXFET® Power MOSFET
RDS(on) max
ID
0.17Ω@VGS = 10V 2.5A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
T op V iew
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
2.5
2.0
20
2.5
0.02
± 30
11
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
2/22/01
1 Page IRF7450
100
VGS
TOP
15V
12V
10V
8.0V
10 7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
0.01
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
10 5.5V
BOTTOM 5.0V
5.0V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150° C
10
TJ = 25 ° C
1
0.1
5.0
V DS= 50V
20µs PULSE WIDTH
5.5 6.0 6.5 7.0 7.5
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 2.5A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7450
0.18 0.35
0.16
VGS = 10V
0.14
0.30
0.25
0.20
ID = 1.5A
0.15
0.12
0
4 8 12 16 20
ID , Drain Current (A)
24
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
0.10
6
8 10 12 14
VGS, Gate -to -Source Voltage (V)
16
Fig 13. On-Resistance Vs. Gate Voltage
600
ID
TOP
1.1A
500 1.6A
BOTTOM 2.5A
400
300
V (B R )D SS
tp
IAS
VDS
L
RG
20V
tp
D .U .T
IA S
0.01Ω
15V
DRIVE R
+
- VD D
A
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRF7450 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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IRF7450 | SMPS MOSFET | International Rectifier |
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