DataSheet.jp

IRF740S の電気的特性と機能

IRF740SのメーカーはSTMicroelectronicsです、この部品の機能は「N - CHANNEL 400V - 0.48 ohm - 10 A - D2PAK PowerMESH] MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF740S
部品説明 N - CHANNEL 400V - 0.48 ohm - 10 A - D2PAK PowerMESH] MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




このページの下部にプレビューとIRF740Sダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

IRF740S Datasheet, IRF740S PDF,ピン配置, 機能
® IRF740S
N - CHANNEL 400V - 0.48 - 10 A - D2PAK
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
IRF740S
400 V < 0.55 10 A
s TYPICAL RDS(on) = 0.48
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAYprocess. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
1
D2PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS Gat e-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM ( )
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Value
400
400
± 20
10
6.3
40
125
1.0
4.0
-65 to 150
150
(1) ISD 10 A, di/dt 120 Α/µs, VDD V(BR)DSS, Tj TJMAX
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
August 1998
1/8

1 Page





IRF740S pdf, ピン配列
IRF740S
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 200 V ID = 5 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 1)
VDD = 320 V ID = 10.7 A VGS = 10V
Min.
Typ .
17
10
35
11
12
Max.
43
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 320 V ID = 10 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 3)
Min.
Typ .
10
10
17
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 10 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD =10 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 3)
Charge
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ .
Max.
10
40
Unit
A
A
1.6
370
V
ns
3.2 µC
17 A
Safe Operating Area
Thermal Impedance
3/8


3Pages


IRF740S 電子部品, 半導体
IRF740S
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRF740S データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF740

N-CHANNEL 400V, 10A, Power MOSFET, TO-220

STMicroelectronics
STMicroelectronics
IRF740

10A/ 400V/ 0.550 Ohm/ N-Channel Power MOSFET

Intersil Corporation
Intersil Corporation
IRF740

N-Channel Power MOSFETs/ 10A/ 350V/400V

Fairchild Semiconductor
Fairchild Semiconductor
IRF740

N-Channel Power MOSFETs

ART CHIP
ART CHIP


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap