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IRF7353D1のメーカーはInternational Rectifierです、この部品の機能は「FETKY MOSFET / Schottky Diode」です。 |
部品番号 | IRF7353D1 |
| |
部品説明 | FETKY MOSFET / Schottky Diode | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7353D1ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD- 91802A
IRF7353D1
FETKY™ MOSFET / Schottky Diode
q Co-packaged HEXFET® Power MOSFET
and Schottky Diode
A
1
8
q Ideal For Buck Regulator Applications
q N-Channel HEXFET
q Low VF Schottky Rectifier
q Generation 5 Technology
A2
S3
G4
7
6
5
q SO-8 Footprint
Description
Top View
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
K
K
D
D
VDSS = 30V
RDS(on) = 0.029Ω
Schottky Vf = 0.39V
S O -8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
6.5
5.2
52
2.0
1.3
16
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
± 20
-5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient
Maximum
62.5
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
Starting TJ = 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A
ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
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Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
1
3/17/99
1 Page 100 VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
Power Mosfet Characteristics
100 VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
3.0V
10
IRF7353D1
3.0V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1
10
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
VDS = 10V
20µs PULSE WIDTH
1A
3.0 3.5 4.0 4.5 5.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 ID = 5.8A
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7353D1
Schottky Diode Characteristics
10
1
TJ = 150°C
TJ = 125°C
TJ = 25°C
0.1
0.0
0.2 0.4 0.6 0.8
FFoorwrwaardrdVVo oltaltag geeDDrorpop- V- FVMF ((VV))
1.0
Fig. 12 -Typical Forward Voltage Drop Characteristics
100
10
1
0.1
0.01
0.001
TJ = 150°C
125°C
100°C
75°C
50°C
25°C
0.0001
0
5
10
15
20
25
Reverse Voltage - V R (V)
)
30
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
160
V r = 80 % R ated
140
R thJA = 62.5°C /W
Sq uare wave
120
100
80
D = 3/4
D = 1/2
D =1/3
60 D = 1/4
D = 1/5
40
DC
20
0A
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Average Forw ard C urrent - I F(AV) (A)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6 www.irf.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRF7353D1 | FETKY MOSFET / Schottky Diode | International Rectifier |
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